Chemical vapor deposition (CVD) is the process of using methods such as heating ionomer excitation or light radiation to react with gaseous or vapor state chemicals and deposit them in an atomic state on a substrate at an appropriate location. This results in the formation of the required solid film or coating.
The pressure in the reaction chamber, gas flow rate, and chip temperature all play a role in the variation range of deposition parameters, so Considering that the variables in the deposited film and the deposition rate determine the output of the reaction chamber, the film generated by the reaction will not only deposit on the chip, but also on other components of the reaction chamber. Therefore, the degree of thorough cleaning of the reaction chamber is also important
Chemical vapor deposition is a traditional technique for preparing thin films. Its principle is to use gaseous precursor reactants to form thin films on wafers through chemical reactions between atoms and molecules. Vapor deposition can produce materials with high quality, purity, and strength, making it very popular in the semiconductor industry
